PART |
Description |
Maker |
HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V3222 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
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Infineon Technologies AG Infineon Technologies A...
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UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
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NEC, Corp. NEC Corp. NEC[NEC]
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HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
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SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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HYS72V16220GU HYS64V16220GU HYS64V8300GU HYS72V830 |
3.3 V 16M × 64-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 64-× 2列同步动态RAM模块) 3.3 V 16M × 72-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 72-× 2列同步动态RAM模块) 3.3 V 8M × 64-Bit × 1 Bank同步动态DRAM Module(3.3 V 8M × 64-× 1列同步动态RAM模块) 3.3800万64位1行同步动态内存(3.38米64 -位1列同步动态内存模块)
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SIEMENS AG
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HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
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SIEMENS AG Infineon Technologies AG
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MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
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MBM29LV160B-12PCV MBM29LV160T-12PCV MBM29LV160T-80 |
16M (2M x??8/1M x 16) BIT CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 80 ns, PBGA48 16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO46 CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 120 ns, PDSO48 16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PBGA48 D10 - CONNECTOR ACCESSORY 16M (2M x′ 8/1M x 16) BIT
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FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
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IDT72T20108 IDT72T2098 IDT72T20128 |
2.5 VOLT HIGH-SPEED TeraSync? DDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION
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IDT
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PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存)
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NEC, Corp.
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MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
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NEC, Corp. NEC Corp.
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IDT72T4088 IDT72T4088L10BB IDT72T4088L10BBI IDT72T |
2.5 VOLT HIGH-SPEED TeraSync DDR/SDR FIFO 40-BIT CONFIGURATION 2.5 VOLT HIGH-SPEED TeraSync?? DDR/SDR FIFO 40-BIT CONFIGURATION
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IDT[Integrated Device Technology]
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